刘立，工学博士，硕士研究生导师。2017年6月，于华北电力大学（北京）电气工程及其自动化专业获得学士学位；2024年6月，于浙江大学电气工程专业获得博士学位，从事宽禁带半导体器件及功率集成技术的研究工作。先后参与多个科研项目，研究并制备了碳化硅MOSFET、碳化硅JBS/MPS/PiN二极管、新型高效槽终端器件、碳化硅横向高压功率器件、以及碳化硅功率集成芯片等。在IEEE TED，EDL，TPEL，ISPSD等高水平期刊或会议上发表相关论文30篇，其中第一作者12篇，获授权国家发明专利3项，并获得2021年IEEE WiPDA-Asia国际会议的最佳论文奖（Best Paper Award）。

研究方向：宽禁带半导体器件及功率集成技术，涉及结构设计、工艺制备、测试表征等

科研项目:

1. 国家自然科学基金面上项目：面向高频高压应用的元胞级碳化硅功率集成芯片技术基础研究，2019/01-2022/12，63万，主要参与人

发表论文：

1. L. Liu, J. Wang, N. Ren, Q. Guo, and K. Sheng, 1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2), IEEE Electron Device Letters, vol. 45, no. 8, pp. 1492-1495, 2024. (SCI)

2. L. Liu, Q. Guo, J. Wang, M. Bai, J. Li, N. Ren, and K. Sheng, “Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With DOUBLE-RESURFs Technology for Power ICs,” IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1572-1579, 2024. (SCI)

3. L. Liu, J. Wang, Z. Zhu, H. Xu, Q. Guo, N. Ren, and K. Sheng, 1540V 21.8mΩ·cm2 4H-SiC Lateral MOSFETs With DOUBLE RESURFs for Power Integration Applications, Solid-State Electronics, vol. 211, pp. 108829, 2024. (SCI)

4. L. Liu, J. Wu, H. Xu, Z. Zhu, N. Ren, Q. Guo, J. Zhang, and K. Sheng, The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes, IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1226-1232, 2022. (SCI)

5. L. Liu, J. Wang, H. Wang, N. Ren, Q. Guo, and K. Sheng, Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current, IEEE Electron Device Letters, vol. 43, no. 1, pp. 104-107, 2022. (SCI)

6. N. Ren, L. Liu, J. Wu, and K. Sheng, Plasma Spreading Layers: An Effective Method for Improving Surge and Avalanche Robustness of SiC Devices, IEEE Transactions on Electron Devices, vol. 68, no. 11, pp. 5687-5694, 2021. (SCI)

7. L. Liu, J. Wu, N. Ren, Q. Guo, and K. Sheng, 1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability, IEEE Transactions on Electron Devices, vol. 67, no. 9, pp. 3679-3684, 2020. (SCI)

8. L. Liu, N. Ren, J. Wu, Z. Zhu, H. Xu, Q. Guo, and K. Sheng, Comparing Hexagonal and Circular Cell designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability, in IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Wuhan, China, 2021. (Best Paper Award, EI Conference)

9. L. Liu, J. Wang, J. Li, N. Ren, Q. Guo, and K. Sheng, Monolithic Integration of SiC Lateral MOSFET with Lateral Schottky Diode for Power Converters in IEEE Proc. Int. Symp. Power Semiconductor Devices IC's (ISPSD), Bremen, Germany, 2024. (EI Conference)

10. L. Liu, J. Wang, Z. Wang, M. Bai, J. Li, Z. Zhu, H. Xu, N. Ren, Q. Guo, and K. Sheng, Electrical Characterization and Analysis of 4H-SiC Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits, in IEEE Proc. Int. Symp. Power Semiconductor Devices IC's (ISPSD), Hong Kong, China, 2023. (EI Conference)

11. L. Liu, N. Ren, J. Wu, Z. Zhu, H. Xu, Q. Guo, and K. Sheng, Investigation of Avalanche Capability of 1200V 4H-SiC MPS Diodes and JBS Diodes, in IEEE Proc. Int. Symp. Power Semiconductor Devices IC's (ISPSD). Vienna, Austria, 2020. (EI Conference)

12. L. Liu, N. Ren, Z. Zhu, H. Xu, Q. Guo, X. Gan, F. Wei, J. Zhu, L. Chen, W. Zhang, and K. Sheng, Single Pulse Avalanche Robustness and Analysis for 1200-V SiC Junction Barrier Schottky Diode, in China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), Shenzhen, China, 2020. (EI Conference)

授权专利：

1. 王珏，刘立，盛况，于浩，“一种碳化硅元胞级功率集成芯片结构”，专利号：ZL202011598325.6.（已授权）

2. 盛况，刘立，王珏，于浩，“一种引入纵向沟道结构的功率集成芯片”，专利号：ZL202110235396.8. （已授权）

3. 王紫石，王珏，刘立，闫茹，盛况，“一种改善 4H-SiC MOSFET沟道载流子迁移率及栅极漏电的工艺方法”，专利号：ZL202310090322.9. （已授权）

获奖及荣誉：

2024年，获浙江大学优秀博士毕业生

2023年，获浙江大学争创优秀博士学位论文资助（优博）

2022年，获浙江大学电气工程学院王国松奖学金（院设最高荣誉）

2021年，获浙江大学博士生国家奖学金

2021年，获IEEE WiPDA-Asia国际会议最佳论文奖（Best Paper Award）

联系方式：18668033662